FDP047N08 — N-Channel PowerTrench®
MOSFET
FDP047N08
N-Channel PowerTrench®
MOSFET
75 V, 164 A, 4.
7 mΩ
November 2013
Features
• RDS(on) = 3.
8 mΩ (Typ.
) @ VGS = 10 V, ID = 80 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Po...