FDP12N50F / FDPF12N50FT N-Channel
MOSFET
December 2007
UniFETTM
FDP12N50F / FDPF12N50FT
N-Channel
MOSFET
500V, 11.
5A, 0.
7Ω Features
• RDS(on) = 0.
59Ω ( Typ.
)@ VGS = 10V, ID = 6A • Low gate charge ( Typ.
21nC) • Low Crss ( Typ.
11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suit...