FDP150N10 N-Channel PowerTrench®
MOSFET
March 2013
FDP150N10
N-Channel PowerTrench®
MOSFET
100 V, 57 A, 15 mΩ
Features
• RDS(on) = 12 mΩ ( Typ.
) @ VGS = 10 V, ID = 49 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Su...