FDP2710 — N-Channel PowerTrench®
MOSFET
October 2013
FDP2710
N-Channel PowerTrench®
MOSFET
250 V, 50 A, 42.
5 mΩ
Features
• RDS(on) = 36.
3 mΩ ( Typ.
)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low
RDS(on) • High Power and Current Handing Capability
• RoHS Compliant
General Description
This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances • Synchronous Rectification
D
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise no...