FDP3205 N-Channel PowerTrench®
MOSFET
May 2008
FDP3205
Features
N-Channel PowerTrench®
MOSFET
55V, 100A, 7.
5mΩ Description
• This N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
• RDS(on) = 6.
1mΩ ( Typ.
)@ VGS = 10V, ID = 59A • High performance trench technology for extermly low RDS(on) • High power and current handing capability • RoHS compliant
D
G D S
TO-220 FDP Series
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
com Symbol VDSS
VGSS ID IDM EAS PD TJ, TSTG Parameter Drain to Source
Voltage G...