isc N-Channel
MOSFET Transistor
·FEATURES ·With TO-220 packaging ·Drain Source
Voltage-
: VDSS ≥100V ·Static drain-source on-resistance:
RDS(on) ≤ 9mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
100
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous;@Tc=25℃
80
A
PD
Total Dissipation
310
W
Tj
Operating Junction Temperature
-55~175 ℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal r...