FDP65N06 — N-Channel UniFETTM
MOSFET
FDP65N06
N-Channel UniFETTM
MOSFET
60 V, 65 A, 16 mΩ
Features
• RDS(on) = 13 mΩ (Typ.
) @ VGS = 10 V, ID = 32.
5 A • Low Gate Charge ( typical 33 nC) • Low Crss ( typical 35 pF) • Fast Switching • Improved dv/dt Capability
November 2013
Description
UniFETTM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS technology.
This
MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and elect...