FDP8874
FDP8874
N-Channel PowerTrench®
MOSFET 30V, 114A, 5.
3mΩ
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• rDS(ON) = 5.
3mΩ, VGS = 10V, ID = 40A • rDS(ON) = 6.
6mΩ, VGS = 4.
5V, ID = 40A • High performance trench technology for extremely low
rDS(ON) • Low gate charge
• High power and current handling capability • RoHS Compliant
(FLANGE) DRAIN
SOURCE
DRAIN
GATE
G
TO-220AB FDP SERIES
MOSFET Maximum Ratings TC = 25°C un...