Part Number
|
FDR4410 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Mar 30, 2005 |
Detailed Description
|
April 1998
FDR4410 N-Channel Enhancement Mode Field Effect Transistor
General Description
The FDR4410 has been designed...
|
Datasheet
|
FDR4410
|
Overview
April 1998
FDR4410 N-Channel Enhancement Mode Field Effect Transistor
General Description
The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY.
The SuperSOTTM-8 package is 40% smaller than the SO-8 package.
The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package.
Features
9.
3 A, 30 V.
RDS(ON) = 0.
013 Ω @ VGS = 10 V RDS(ON) = 0.
020 Ω @ VGS = 4.
5 V.
High density cell design for extremely low RDS(ON).
Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S
D
...
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