FDS2734 Single N-Channel UItraFET Trench®
MOSFET
August 2006
FDS2734 N-Channel UItraFET Trench®
MOSFET
250V, 3.
0A, 117mΩ
Features
Max rDS(on) =117mΩ at VGS =10V, ID = 3.
0A Max rDS(on) =126mΩ at VGS = 6V, ID = 2.
8A Fast switching speed High performance trench low rDS(on) technology for extremely
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General Descriptions
This single N-Channel
MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
DC-DC conversion
High power and current handling capability RoHS compliant
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