FDS5682 N-Channel PowerTrench®
MOSFET
May 2008
FDS5682 N-Channel PowerTrench®
MOSFET
60V, 7.
5A, 21mΩ
Features
rDS(ON) = 21mΩ, VGS = 10V, ID = 7.
5A
rDS(ON) = 26.
5mΩ, VGS = 4.
5V, ID = 6.
7A
High performance trench technology for extremely low rDS(ON)
Low gate charge
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
Branding Dash
1 2 3 4
SO-8
5
54 63 72 81
©2008 Fairchild Semicond...