FDS6815
July 1999 ADVANCE INFORMATION
FDS6815
Dual P-Channel 2.
5V Specified PowerTrenchTM
MOSFET
General Description
These P-Channel 2.
5V specified
MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process.
It has been optimized for power management applications which require a wide range of gate drive
voltages.
Features
-5.
5 A, 20 V.
RDS(ON) = 0.
040 Ω @ VGS = 4.
5 V RDS(ON) = 0.
050 Ω @ VGS = 2.
5 V Extended VGSS range ( ±12V) for battery applications.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
Applications Load switch Battery protect...