October 1998
FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM
MOSFET
General Description Features
5.
5 A, 30 V.
RDS(ON) = 0.
040 Ω @ VGS = 10 V RDS(ON) = 0.
055 Ω @ VGS = 4.
5 V.
Fast switching speed.
Low gate charge (typical 5 nC).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
These N-Channel Logic Level
MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are ...