FDS86106 N-Channel Power Trench®
MOSFET
July 2011
FDS86106
N-Channel Power Trench®
MOSFET
100 V, 3.
4 A, 105 mΩ
Features
General Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.
4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.
7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
ruggedness.
Applications
Synchronous Rectifier
Primary Switch For Bridge Topology
D D D
D
SO-8
Pin 1
G S S...