FDS86252 N-Channel Power Trench®
MOSFET
April 2011
FDS86252
N-Channel Power Trench®
MOSFET
150 V, 4.
5 A, 55 mΩ
Features
General Description
Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.
5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.
7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Application
DC-DC Conversion
D D D
D
SO-8
Pin 1
G S S...