FDS8870 N-Channel PowerTrench®
MOSFET
April 2007
FDS8870
tm
N-Channel PowerTrench®
MOSFET
30V, 18A, 4.
2mΩ
Features
rDS(on) = 4.
2mΩ, VGS = 10V, ID = 18A rDS(on) = 4.
9mΩ, VGS = 4.
5V, ID = 17A High performance trench technology for extremely low
rDS(on) Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
5 1
2 3 4
SO-8
5
4
6
3
7
2
...