FDS8874 N-Channel PowerTrench®
MOSFET
August 2005
FDS8874 N-Channel PowerTrench®
MOSFET
30V, 16A, 5.
5mΩ Features
rDS(ON) = 5.
5mΩ, VGS = 10V, ID = 16A rDS(ON) = 7.
0mΩ, VGS = 4.
5V, ID = 15A High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability 100% Rg tested RoHS Compliant
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
5 6
com
4 3 2 1
7 8
MOSFET Maximum Ratings
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