FDS8876 N-Channel PowerTrench®
MOSFET
April 2007
FDS8876 N-Channel PowerTrench®
MOSFET
30V, 12.
5A, 8.
2mΩ
tm
Features
rDS(on) = 8.
2mΩ, VGS = 10V, ID = 12.
5A rDS(on) = 10.
2mΩ, VGS = 4.
5V, ID = 11.
4A High performance trench technology for extremely low
rDS(on) Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
DC/DC converters
Branding Dash
1 2 3 4
SO-8
5
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