FDS8884 N-Channel PowerTrench®
MOSFET
February 2006
FDS8884
N-Channel PowerTrench®
MOSFET
30V, 8.
5A, 23mΩ General Descriptions
This N-Channel
MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
A
REE I DF
Features
Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.
5A Max rDS(on) = 30mΩ at VGS = 4.
5V, ID = 7.
5A Low gate charge 100% RG Tested RoHS Compliant
M ENTATIO LE N MP
LE
D
D
D
D
com
5 6 7 8
4 3 2 1
SO-8
S
S
S
G
MOSFET Maximum Ratings
Symbol VDS VGS ID EAS PD TJ, TSTG Dr...