FDS89141 Dual N-Channel Shielded Gate PowerTrench®
MOSFET
September 2015
FDS89141
Dual N-Channel Shielded Gate PowerTrench®
MOSFET
100 V, 3.
5 A, 62 mΩ
Features
General Description
Shielded Gate
MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.
5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.
8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package 100% UIL Tested RoHS Compliant
This N-Channel
MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching perform...