FDS8958A
April 2008
FDS8958A
tm
Dual N & P-Channel PowerTrench®
MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low
voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• Q1: N-Channel 7.
0A, 30V RDS(on) = 0.
028Ω @ VGS = 10V RDS(on) = 0.
040Ω @ VGS = 4.
5V
• Q2: P-Channel -5A, -30V RDS(on) = 0.
052Ω @ VGS = -10V RDS(on) = 0.
080Ω @ VGS = -4.
5V
• Fast switching...