FDS8958B Dual N & P-Channel PowerTrench®
MOSFET
FDS8958B
Dual N & P-Channel PowerTrench®
MOSFET
Q1-N-Channel: 30 V, 6.
4 A, 26 mΩ Q2-P-Channel: -30 V, -4.
5 A, 51 mΩ
November 2013
Features
Q1: N-Channel Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.
4 A Max rDS(on) = 39 mΩ at VGS = 4.
5 V, ID = 5.
2 A
Q2: P-Channel Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.
5 A Max rDS(on) = 80 mΩ at VGS = -4.
5 V, ID = -3.
3 A HBM ESD protection level 3.
5 kV (Note 3)
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce...