FDS9958 Dual P-Channel PowerTrench®
MOSFET
July 2007
FDS9958
Dual P-Channel PowerTrench
MOSFET
-60V, -2.
9A, 105mΩ
Features
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.
9A Max rDS(on) =135mΩ at VGS = -4.
5V, ID = -2.
5A RoHS Compliant
®
tm
General Description
These P-channel logic level specified
MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Applications
Load Switch...