August 1998
FDT457N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance.
These products are well suited to low
voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
5 A, 30 V.
RDS(ON) = 0.
06 Ω @ VGS = 10 V RDS(ON) = 0.
090 Ω @ VGS = 4.
5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capab...