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MOSFET – N-Channel, POWERTRENCH)
100 V, 6.
6 A, 28 mW
FDT86102LZ
General Description This N−Channel
MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and switching loss.
G−S zener has been added to enhance ESD
voltage level.
Features
• Max rDS(on) = 28 mW at VGS = 10 V, ID = 6.
6 A • Max rDS(on) = 38 mW at VGS = 4.
5 V, ID = 5.
5 A • HBM ESD Protection Level 6 kV Typical (Note 4) • Very Low Qg and Qgd Compared to Competing Trench Technologies • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halide Free and RoHS Compliant
Applications
• DC − DC Conversion • Inverter...