com
January 2006
FDY2001PZ Dual P-Channel (– 2.
5V) Specified PowerTrench®
MOSFET
FDY2001PZ
Dual P-Channel (– 2.
5V) Specified PowerTrench®
MOSFET
General Description
This Dual P-Channel
MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.
5v.
Features
• – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.
5 V RDS(ON) = 12Ω @ VGS = – 2.
5 V • ESD protection diode (note 3) • RoHS Compliant
Applications
• Li-Ion Battery Pack
6
5
4
S1 G1
1 2 3
6 5 4
D1 G2 S2
1
2
D2
3
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG
Parameter
Drain-Source
Voltage Gate-Source
Voltage D...