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FDY3001NZ Dual N-Channel 2.
5V Specified PowerTrench®
MOSFET
January 2006
FDY3001NZ
Dual N-Channel 2.
5V Specified PowerTrench®
MOSFET
General Description
This Dual N-Channel
MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.
5v.
Features
• 200 mA, 20 V RDS(ON) = 5 Ω @ VGS = 4.
5 V RDS(ON) = 7 Ω @ VGS = 2.
5 V • ESD protection diode (note 3) • RoHS Compliant
Applications
• Li-Ion Battery Pack
6
5
4
S1 G1
1 2 3
6 5 4
D1 G2 S2
1
2
D2
3
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current – Con...