FDZ293P P-Channel 2.
5 V Specified PowerTrench® BGA
MOSFET
Feb 2006
FDZ293P P-Channel 2.
5 V Specified PowerTrench® BGA
MOSFET
General Description
Combining Fairchild’s advanced 2.
5V specified PowerTrench process with state of the art BGA packaging, the FDZ293P minimizes both PCB space and rDS(on).
This BGA
MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on).
Features
• –4.
6 A, –20 V rDS(on) = 46 mΩ @ VGS = –4.
5 V rDS(on) = 72 mΩ @ VGS = –2.
5 V
• Occupies only 2.
25 mm2 of PCB area.
Less than 50% of the area of a SS...