Part Number
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FFSH20120A-F085 |
Manufacturer
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ON Semiconductor |
Description
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Silicon Carbide Schottky Diode |
Published
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Nov 8, 2020 |
Detailed Description
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Silicon Carbide Schottky Diode
1200 V, 20 A
FFSH20120A-F085
Description Silicon Carbide (SiC) Schottky Diodes use a comp...
|
Datasheet
|
FFSH20120A-F085
|
Overview
Silicon Carbide Schottky Diode
1200 V, 20 A
FFSH20120A-F085
Description Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
• Max Junction Temperature 175°C • Avalanche Rated 210 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of P...
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