IGBT - Field Stop, Trench
650 V, 60 A
FGH60T65SHD
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation
Voltage: VCE(sat) = 1.
6 V (Typ.
) @ IC = 60 A • 100% of the Parts Tested for ILM (Note 1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant
Application...