IGBT - Field Stop, Trench
650 V, 75 A
FGH75T65UPD, FGH75T65UPD-F155
Description Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation
Voltage: VCE(sat) = 1.
65 V(Typ.
) @ IC = 75 A • 100% of Parts Tested ILM • High Input Impedance • Tightened Parameter Distribution • Short Circuit Ruggedness 5 ms @ 25°C • These Devices are Pb−Free and are ...