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FGHL50T65LQDT

Part Number FGHL50T65LQDT
Manufacturer ON Semiconductor
Description IGBT
Published Oct 3, 2022
Detailed Description Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full curre...
Datasheet FGHL50T65LQDT




Overview
Field Stop Trench IGBT 50 A, 650 V FGHL50T65LQDT Field stop 4th generation Low VCE(Sat) IGBT technology and Full current rated copak Diode technology.
Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.
15 V (Typ.
) @ IC = 50 A • 100% of the Parts are Tested for ILM (Note 2) • Smooth and Optimized Switching • Tight Parameter Distribution • Co−packed with Soft and Fast Recovery Diode • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Solar Inverter • UPS, ESS • PFC, Converters MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitte...






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