FGS15N40L
September 2001
IGBT
FGS15N40L
General Description
Insulated Gate Bipolar Transistors(IGBTs) with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity.
These devices are well suitable for strobe application
Features
• High Input Impedance • High Peak Current Capability (130A) • Easy Gate Drive
Application
• Strobe Flash
C C
C
C G E
C
E
E
G E
8-SOP
Absolute Maximum Ratings
Symbol VCES VGES ICM (1) PC TJ Tstg TL
TC = 25°C unless otherrwise noted
Description Collector-Emitter
Voltage Gate-Emitter
Voltage Pulsed Collector Current Maximum Power Dissipation Operating Junction Temperature Stor...