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com FH1100 SILICON DIODE DESCRIPTION: The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.
PACKAGE STYLE DO-7 FEATURES INCLUDE: • QS = 1.
6 pC Typ.
• C = 1.
0 pF Max.
@ f = 890 MHz • Hermetic Glass Package MAXIMUM RATINGS IF VR PDISS TJ TSTG Tsoldering 10 mA 5.
0 V 100 mW @ TC = 25 °C -65 °C to +125 °C -65 °C to +150 °C +260 °C for 5 Seconds CHARACTERISTICS SYMBOL VF IR VBR CT0 NF QS IF = 10 mA IF = 10 mA VR = 1.
0 V TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 550 1.
0 UNITS mV µA V IR = 100 µA VR = 0 V f = 1.
0 MHz f = 890 MHz 5.
0 1.
0 10 1.
6 pF dB pC A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-...

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