isc N-Channel
MOSFET Transistor
FEATURES ·Drain Current –ID=42A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =9.
7mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
75
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
42
A
PD
Total Dissipation @TC=25℃
40
W
TJ
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTI...