FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKN2510
N-Ch 20V Fast Switching
MOSFETs
Product Summary
BVDSS 20V
RDSON 26mΩ
ID 6.
0A
Description
The FKN2510 is the high cell density trenched N-ch
MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The FKN2510 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source
Voltage Gate-Source
Voltage Co...