FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKS6006
N-Ch 60V Fast Switching
MOSFETs
Product Summary
BVDSS 60V
RDSON 18mΩ
ID 6.
3A
Description
The FKS6006 is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKS6006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Vo...