FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKUC2609
P-Ch 20V Fast Switching
MOSFETs
Product Summary
BVDSS -20V
RDSON 75mΩ
ID -3.
1A
Description
The FKUC2609 is the high cell density trenched P-ch
MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The FKUC2609 meets the RoHS and Green Product requirement with full function reliability approved.
SOT23S Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source
Voltage Gate-Source Volt...