FLC257MH-6
FEATURES
• High Output Power: P1dB = 34.
0dBm(Typ.
) • High Gain: G1dB = 9.
0dB(Typ.
) • High PAE: ηadd = 36%(Typ.
) • Proven Reliability • Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC257MH-6 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source
Voltage Gate-Source
Voltage
VDS VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperat...