FLM0910-25F
X-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=44dBm(Typ.
) ・High Gain: G1dB=7.
0dB(Typ.
) ・High PAE: ηadd=30%(Typ.
) ・Broad Band: 9.
5~10.
5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25℃)
Item Drain-Source
Voltage Gate-Source
Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 93.
7 -65 to +175 175 Unit V V W ℃ ℃
Recommended Operating Condition(Case Temperature Tc=25℃)
Item DC Input ...