w
m C-Band Internally Matched FET o FEATURES .
c • High Output Power: P1dB = 43.
0dBm (Typ.
) U • High Gain: G1dB = 10.
0dB (Typ.
) 4 t • High PAE: ηadd = 37% (Typ.
) e = 32.
0dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.
9h ~ 6.
4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D .
The FLM5964-18F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a w 50 ohm system.
Item Drain-Source
Voltage Gate-Source
Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition
FLM5964-18F
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