FLM5964-4F
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB = 36.
5dBm (Typ.
) • High Gain: G1dB =10.
0dB (Typ.
) • High PAE: hadd = 37% (Typ.
) • Low IM3 = -46dBc@Po = 25.
5dBm • Broad Band: 5.
9 to 6.
4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25deg.
C) Item Symbol Condition Drain-Source
Voltage VDS Gate-Source
Voltage VGS Total Power Dissipation PT T...