FLM5964-8F/001
C-Band Internally Matched FET
FEATURES • High Output Power: P1dB=39.
5dBm(Typ.
) • High Gain: G1dB=9.
0dB(Typ.
) • High PAE: hadd=35%(Typ.
) • Broad Band: 5.
85 to 6.
75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS
Item Drain-Source
Voltage (Tc=25deg.
C) Gate-Source
Voltage (Tc=25deg.
C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.
8 -65 to +175 +175 Unit V V W deg.
C deg.
C
RECOMMENDED OPERATING CONDITION
Ite...