FLM7785-8F
C-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 39.
5dBm (Typ.
) High Gain: G1dB = 8.
5dB (Typ.
) High PAE: ηadd = 34% (Typ.
) Low IM3 = -46dBc@Po = 28.
5dBm Broad Band: 7.
7 ~ 8.
5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM7785-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source
Voltage Gate-Source
Voltage Total Power Dissipation Storage Temperature Channel Temperatu...