FLM8596-4F
X, Ku-Band Internally Matched FET FEATURES
• • • • • • • High Output Power: P1dB = 36.
0dBm (Typ.
) High Gain: G1dB = 7.
5dB (Typ.
) High PAE: ηadd = 29% (Typ.
) Low IM3 = -45dBc@Po = 25.
5dBm Broad Band: 8.
5 ~ 9.
6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed
DESCRIPTION
The FLM8596-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source
Voltage Gate-Source
Voltage Total Power Dissipation Storage Temperature Channel Tempe...