SOT23 PNP SILICON PLANAR HIGH
VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation
voltages
FMMT560
C PARTMARKING DETAIL – 560 B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -500 -500 -5 -500 -150 500 -55 to +150 UNIT V V V mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Curr...