SOT23 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 5 - JANUARY 1997 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A PARTMARKING DETAILS COMPLEMENTARY TYPE 589 FMMT489
FMMT589
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MAX.
VALUE -50 -30 -5 -2 -1 -200 500 -55 to +150 UNIT V V V -100 -100 -100 -0.
25 -0.
35 -0.
65 -1.
2 -1.
1 100 100 80 40 100 15 300 MHz pF nA nA nA V V V V V CONDITIONS.
IC=-100µ A IC=-10mA* ...