N-Channel Enhancement Mode Power
MOSFET
Description
The FNK0203EA uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
FNK0203EA
General Features
● VDS = 20V,ID =10A RDS(ON) 19mΩ @ VGS=2.
5V RDS(ON) 13mΩ @ VGS=4.
5V ESD Rating: 2500V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● Uni-directional load switch ● Bi-directional load switch
Schematic diagram
Marking and pin assignment
DFN2*3-6 top view
Absolute Maximum Ratings (TA=25℃unless otherwise not...