FNK N-Channel Enhancement Mode Power
MOSFET
FNK08N03C
Description
TheFNK08N03C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =80A RDS(ON) 5.
9mΩ @ VGS=10V
(Typ:5mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Schematic diagram TO-251 top view
Pac...