FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK08NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
FNK08NS04E
General Features
● VDS =85V,ID =120A RDS(ON) 5.
7mΩ @ VGS=10V
(Typ:4.
5mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Automotive applications ● Hard switched and h...